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Sanyo Electric Components Datasheet

ECH8616 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENN8191
ECH8616
N-Channel Silicon MOSFET
ECH8616 General-Purpose Switching Device
Applications
Features
Ultrahigh-speed switching.
4V drive.
Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
60
±20
3
20
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : FJ
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.5A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
60
1.2
2.2
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
3.8 S
70 93 m
92 133 m
560 pF
60 pF
41 pF
11 ns
11 ns
61 ns
32 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12505PE TS IM TB-00001009 No.8191-1/4


Sanyo Electric Components Datasheet

ECH8616 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2206B
0.3
8
5
1
0.65
2.9
4
ECH8616
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
IS=3A, VGS=0
min
Electrical Connection
Ratings
typ
12.8
2.1
2.7
0.81
max
1.2
Unit
nC
nC
nC
V
0.15
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
8765
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
1 2 3 4 8 : Drain1
Top view
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=1.5A
RL=20
D VOUT
ECH8616
P.G 50S
No.8191-2/4


Part Number ECH8616
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8616 Datasheet PDF





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