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ECH8617 - P-Channel Silicon MOSFET

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Features

  • General-Purpose Switching Device.

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Datasheet Details

Part number ECH8617
Manufacturer Sanyo Semicon Device
File Size 69.06 KB
Description P-Channel Silicon MOSFET
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www.DataSheet4U.com Ordering number : ENA0297 ECH8617 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8617 Features • • • General-Purpose Switching Device Applications Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --100 ± 20 --1.5 --12 1.3 1.
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