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Sanyo Electric Components Datasheet

ECH8617 Datasheet

P-Channel Silicon MOSFET

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Ordering number : ENA0297
ECH8617
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8617 General-Purpose Switching Device
Applications
Features
Ultrahigh-speed switching.
4V drive.
Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
--100
±20
--1.5
--12
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : FK
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0V
VDS=--100V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--0.5A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--100
--1.2
1.8
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
3.1 S
400 520 m
460 645 m
630 pF
41 pF
38 pF
10.0
ns
5.5 ns
91 ns
27 ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 12506PE MS IM TB-00001932 No. A0297-1/4


Sanyo Electric Components Datasheet

ECH8617 Datasheet

P-Channel Silicon MOSFET

No Preview Available !

ECH8617
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=--50V, VGS=--10V, ID=--1.5A
VDS=--50V, VGS=--10V, ID=--1.5A
VDS=--50V, VGS=--10V, ID=--1.5A
IS=--1.5A, VGS=0V
Ratings
min typ max
Unit
14.7
nC
1.6 nC
2.8 nC
--0.80
--1.2 V
Package Dimensions
unit : mm
7011A-001
Top View
2.9
85
0.15
0 to 0.02
1
0.65
4
0.3
Electrical Connection
87 6 5
12 3 4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --50V
ID= --1A
RL=50
D VOUT
ECH8617
P.G 50S
No. A0297-2/4


Part Number ECH8617
Description P-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8617 Datasheet PDF






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