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Ordering number : ENA0298
ECH8618
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8618
Features
• • •
General-Purpose Switching Device Applications
Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 100 ± 20 2 12 1.3 1.