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Ordering number : ENA0935
ECH8652
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8652
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings --12 ±10 --6 --40 1.3 1.