ECH8652 - P-Channel Silicon MOSFET

SANYO (now Panasonic)

Key Features

General-Purpose Switching Device.

ECH8652 p-channel silicon mosfet by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	ECH8652
Manufacturer	SANYO (now Panasonic)
File Size	114.17 KB
Description	P-Channel Silicon MOSFET
Datasheet	ECH8652 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
ECH8651R	24V 10A N-Channel Power MOSFET	ON Semiconductor
ECH8653	N-Channel Power MOSFET	ON Semiconductor
ECH8654	-20V -5A Dual P-Channel Power MOSFET	ON Semiconductor
ECH8655R	N-Channel Power MOSFET	ON Semiconductor
ECH8655R-R-TL-H	24V 9A N-Channel Power MOSFET	ON Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number	Description
ECH8651R	N-Channel Silicon MOSFET
ECH8653	N-Channel Silicon MOSFET
ECH8654	P-Channel Silicon MOSFET
ECH8655R	N-Channel Silicon MOSFET
ECH8656	N-Channel Silicon MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet.co.kr Ordering number : ENA0935 ECH8652 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8652 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings --12 ±10 --6 --40 1.3 1.