Ordering number : ENA0935
P-Channel Silicon MOSFET
ECH8652 General-Purpose Switching Device
• Low ON-resistance.
• 1.8V drive.
• Composite type, facilitating high-density mounting.
• Halogen free compliance.
Absolute Maximum Ratings at Ta=25°C
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
When mounted on ceramic substrate (900mm2✕0.8mm)
--55 to +150
Electrical Characteristics at Ta=25°C
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
Marking : WX
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the performance, characteristics, and functions of the described products in the independent state, and are not
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customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
O0108PE TI IM TC-00001630 No. A0935-1/4
Datasheet pdf - http://www.DataSheet4U.net/