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EFC4618R-P - N-Channel Silicon MOSFET

Features

  • N-Channel Silicon MOSFET General-Purpose Switching Device.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1123 EFC4618R-P SANYO Semiconductors DATA SHEET EFC4618R-P Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Specifications Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Conditions Ratings 24 ±12 6 60 1.6 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7069-001 1.
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