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Sanyo Electric Components Datasheet

EFC4618R-P Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA1123
EFC4618R-P
SANYO Semiconductors
DATA SHEET
EFC4618R-P
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
2.5V drive
Best suited for LiB charging and discharging switch
Common-drain type
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VSSS
VGSS
IS
ISP
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (5000mm2×0.8mm)
Ratings
24
±12
6
60
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7069-001
1.81
43
Product & Package Information
• Package
: EFCP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 5,000 pcs./reel
Packing Type : TR
Marking
12
0.65
12
43
0.3
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
SANYO : EFCP1818-4CC-037
TR
Electrical Connection
1
Rg
2
Rg
3
Rg=200Ω
4
FT
LOT No.
http://semicon.sanyo.com/en/network
N0911PF TKIM TC-00002637 No. A1123-1/5
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

EFC4618R-P Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
EFC4618R-P
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Source-to-Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Source-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Forward Source-to-Source Voltage
V(BR)SSS
ISSS
IGSS
VGS(off)
| yfs |
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
RSS(on)5
td(on)
tr
td(off)
tf
Qg
VF(S-S)
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=3A
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
IS=3A, VGS=3.7V
IS=3A, VGS=3.1V
IS=3A, VGS=2.5V
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VSS=10V, VGS=4.5V, IS=6A
IS=3A, VGS=0V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 7
Test Circuit 7
Test Circuit 7
Test Circuit 7
Test Circuit 6
min
24
Ratings
typ
0.5
13.5
14
14.5
14.9
18.5
6.5
19.8
20.5
21
23
27
200
815
1840
1770
25.4
0.76
max
1
±10
1.3
23
24
25.5
30
35
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
mΩ
ns
ns
ns
ns
nC
V
Test circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
S2
G2
Test Circuit 2
IGSS(+) / (--)
S2
G2
G1
Test Circuit 3
VGS(off)
S1
S2
G2
IT11565
10V 1mA
G1
S1
IT11567
G1
Test Circuit 4
| yfs |
S1
S2
G2
IT11566
G1
S1
IT11568
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
No. A1123-2/5
Datasheet pdf - http://www.DataSheet4U.net/


Part Number EFC4618R-P
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
PDF Download

EFC4618R-P Datasheet PDF






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