* Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly.
* The FH105 is formed with two chips, being equivalent to the 2SC5245, placed in one package.
* Excellent in thermal equilibrium and pair capability. Electrical C
FH105
Sanyo Semicon Device
63.45 KB
High-frequency low-noise amplifier/ differential amplifier applications.
Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applicati.
📁 Related Datasheet
FH101 High Dynamic Range FET (WJ Communications)
FH101 GaAs MESFET (TriQuint Semiconductor)
FH101-G High Dynamic Range FET (TriQuint Semiconductor)
FH1011 LED (Stanley)
FH102 High-Frequency Low-Noise Amp/ Differential Amp Applications (Sanyo Semicon Device)
FH102A RF Transistor (ON Semiconductor)
FH103 High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications (Sanyo Semicon Device)
FH104 High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications (Sanyo Semicon Device)
FH105A RF Transistor (ON Semiconductor)
FH1 High Dynamic Range FET (WJ Communication)
TAGS
Image Gallery
