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Ordering number : EN8750
FW349
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
FW349
Features
www.DataSheet4U.com • Motor
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General-Purpose Switching Device Applications
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drive application. Low ON-resistance. Ultrahigh-speed switching. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10µs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD PT Tch Tstg duty cycle≤1% duty cycle≤1% Mounted on a ceramic board (1500mm2✕0.