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Ordering number : ENN7781
GK001T
GK001T
Features
• • • • • •
N-Channel GTBT
Switching Regulator Applications
Adoption of process GTBT (Grounded-Trench-MOS assisted Bipolar-mode Field Effect Transistor). High breakdown voltage and high reliablity. High speed switching. Wide ASO. Low saturation voltage, low On resistance : RCE(sat)=280mΩ (at 1A). High hFE (typ : 1000).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC ICP IB PC Tj Tstg PW≤300µs, Duty cycle≤10% Conditions Ratings 600 600 7 2 4 1 0.
GK001T Datasheet
