Datasheet Summary
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Ordering number : ENN7781
Features
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N-Channel GTBT
Switching Regulator Applications
Adoption of process GTBT (Grounded-Trench-MOS assisted Bipolar-mode Field Effect Transistor). High breakdown voltage and high reliablity. High speed switching. Wide ASO. Low saturation voltage, low On resistance : RCE(sat)=280mΩ (at 1A). High hFE (typ : 1000).
Specifications...