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J584 - 2SJ584

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • Micaless package facilitating mounting. www. DataSheet4U. com 3.2 Package Dimensions unit:mm 2078B [2SJ584LS] 10.0 3.5 7.2 4.5 2.8 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch T.

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Part Number Description
J585LS 2SJ585LS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6410 P-Channel Silicon MOSFET 2SJ584LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. www.DataSheet4U.com 3.2 Package Dimensions unit:mm 2078B [2SJ584LS] 10.0 3.5 7.2 4.5 2.8 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS Conditions 0.6 Ratings –250 ±30 –4.5 –18 2.
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