K2395 - N-Channel Junction Silicon FET

Features

Large | yfs |.
Small Ciss.
Ultralow noise figure. Package Dimensions unit:mm 2034A [2SK2395] 4.0 2.2 0.4 0.5 0.4 0.4 0.6 1.8 15.0 3.0 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 3.0 3.8nom Conditions Parameter Symbo.

Sanyo Semicon Device

Datasheet Details

Part number	K2395
Manufacturer	SANYO
File Size	94.48 KB
Description	N-Channel Junction Silicon FET
Datasheet	K2395 Datasheet
Additional preview pages of the K2395 datasheet.

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Full PDF Text Transcription

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Ordering number:ENN4840 N-Channel Junction Silicon FET 2SK2395 Low-Noise HF Amplifier Applications Applications · AM tuner RF amplifier. · Low-noise amplifier. Features · Large | yfs |. · Small Ciss. · Ultralow noise figure. Package Dimensions unit:mm 2034A [2SK2395] 4.0 2.2 0.4 0.5 0.4 0.4 0.6 1.8 15.0 3.0 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 3.0 3.

Published: Nov 24, 2014 |