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MCH3444 - Ultrahigh-Speed Switching Applications

Features

  • Package Dimensions unit : mm 2167A [MCH3444] 0.25 0.3 0.15 Low ON-resinstance. Ultrahigh-speed switching. 2.5V drive. 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) 0.85 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP.

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www.DataSheet4U.com Ordering number : ENN7608 MCH3444 N-Channel Silicon MOSFET MCH3444 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2167A [MCH3444] 0.25 0.3 0.15 Low ON-resinstance. Ultrahigh-speed switching. 2.5V drive. 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) 0.85 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions SANYO : MCPH3 Ratings 30 ±12 2.5 10 0.
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