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MCH3477 - N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features

  • N-Channel Silicon MOSFET General-Purpose Switching Device.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1260 MCH3477 SANYO Semiconductors DATA SHEET MCH3477 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings 20 ±12 4.5 18 1.
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