SBJ200-06J - Schottky Barrier Diode

Sanyo Semicon Device

Datasheet Details

Part number	SBJ200-06J
Manufacturer	Sanyo Semicon Device
File Size	66.90 KB
Description	Schottky Barrier Diode
Datasheet	SBJ200-06J_SanyoSemiconDevice.pdf

Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure. Low forward voltage (VF typ=0.55V). High temperature operation is possible (Tj=150°C). High surge breakdown voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFS.

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Published: Jul 18, 2008 |