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SCH1302 - Ultrahigh-Speed Switching Applications

Features

  • Package Dimensions unit : mm 2221 [SCH1302] Top View 1.6 Side View 0.2 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.05 6 5 4 0.15 1.6 1.5 0.05 1 2 3 0.5 Bottom View Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mou.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7532 SCH1302 P-Channel Silicon MOSFET SCH1302 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2221 [SCH1302] Top View 1.6 Side View 0.2 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.05 6 5 4 0.15 1.6 1.5 0.05 1 2 3 0.5 Bottom View Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 0.56 0.25 Side View 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 Unit --20 ±10 --2 --8 0.
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