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Sanyo Electric Components Datasheet

C3383 Datasheet

2SC3383

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Ordering number:ENN1943B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1392/2SC3383
AF Amp Applications
Features
· Adoption of FBET process.
· AF amp.
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Package Dimensions
unit:mm
2003B
[2SA1392/2SC3383]
5.0
4.0 4.0
0.45
0.5
0.45 0.44
( ) : 2SA1392
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1
hFE2
VCB=(–)40V, IE=0
VEB=(–)5V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)0.1mA
Gain-Bandwidth Product
fT VCE=(–)6V, IC=(–)10mA
* : The 2SA1392/2SC3383 are classified by 1mA hFE as follows :
Rank
R
S
T
U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
123
1.3 1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
Ratings
(–)60
(–)50
(–)6
(–)200
(–)400
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
(–)0.1 µA
(–)0.1 µA
100*
560*
70
250 MHz
(200)
MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502AS (KT)/71598HA (KT)/4277TA, TS No.1943-1/4


Sanyo Electric Components Datasheet

C3383 Datasheet

2SC3383

No Preview Available !

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
2SA1392/2SC3383
Symbol
Conditions
VCE(sat) IC=(–)100mA, IB=(–)10mA
VBE(sat) IC=(–)100mA, IB=(–)10mA
Cob VCB=(–)6V, f=1MHz
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
Ratings
min typ
(–)60
(–)50
(–)6
2.7
(3.7)
max
(–)0.3
(–)1.0
Unit
V
V
pF
pF
V
V
V
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--20 IC -- VCE
--16 --70µA --60µA --50µA
--40µA
--12 --30µA
2SA1392
--8 --20µA
--10µA
--4
0
0
--50
--40
IB=0
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR03393
IC -- VCE
--400µA
--350µA
--300µA
--250µA--200µA
2SA1392
--150µA
--30
--100µA
--20
--50µA
--10
0
0
--240
--200
IB=0
--0.2 --0.4 --0.6 --0.8 --1.0
Collector-to-Emitter Voltage, VCE – V ITR03395
IC -- VBE
2SA1392
VCE=--6V
--160
--120
--80
--40
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR03397
20 IC -- VCE
2SC3383
60µA
16 50µA
40µA
12
30µA
8
20µA
4 10µA
IB=0
0 0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR03394
50
2SC3383
40
IC -- VCE
300µ2A50µ2A00µA
150µA
30
100µA
20
50µA
10
0
0
120
100
IB=0
0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE – V ITR03396
IC -- VBE
2SC3383
VCE=6V
80
60
40
20
0
0 200 400 600 800 1000
Base-to-Emitter Voltage, VBE – mV ITR03398
No.1943-2/4


Part Number C3383
Description 2SC3383
Maker Sanyo Semiconductor
Total Page 4 Pages
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