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D2646 - 2SD2646

Key Features

  • High speed. High breakdown voltage(VCBO=1500V).
  • High reliability(Adoption of HVP process). www. DataShee U . c o m of MBIT process.
  • t 4 Adoption.
  • Package Dimensions unit : mm 2174A [2SD2646] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collec.

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Full PDF Text Transcription for D2646 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for D2646. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENN6922 2SD2646 NPN Triple Diffused Planar Silicon Transistor 2SD2646 Color TV Horizontal Deflection Output Applications Features High speed. High break...

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izontal Deflection Output Applications Features High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. •t 4 Adoption • • Package Dimensions unit : mm 2174A [2SD2646] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 5.45 3.5 Conditions