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Sanyo Electric Components Datasheet

CPH6602 Datasheet

Ultrahigh-speed Switching

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Ordering number : ENN7145
CPH6602
N-Channel Silicon MOSFET
CPH6602
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
Low ON-resistance.
unit : mm
Ultrahigh-speed switching.
2202
2.5V drive.
Composite type with 2 MOSFETs contained in a single
package, facilitating high-density mounting.
6
2.9
54
[CPH6602]
0.15
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
0.95
0.4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : CPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Ratings
20
±10
2.0
8.0
0.9
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : FM
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4V
ID=0.5A, VGS=2.5V
min
20
0.4
2.4
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
3.5 S
100 130 m
130 180 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3452 No.7145-1/4


Sanyo Electric Components Datasheet

CPH6602 Datasheet

Ultrahigh-speed Switching

No Preview Available !

CPH6602
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=2A
VDS=10V, VGS=4V, ID=2A
VDS=10V, VGS=4V, ID=2A
IS=2A, VGS=0
Ratings
min typ max
Unit
190 pF
40 pF
25 pF
9 ns
25 ns
25 ns
18 ns
2.7 nC
0.6 nC
0.6 nC
0.87
1.2 V
Electrical Connection
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1 2 3 Top view
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=10V
ID=1A
RL=10
D VOUT
CPH6602
P.G 50S
ID -- VDS
2.0
1.8 4.0V
1.6 3.0V
1.4
2.5V
VGS=1.5V
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT02687
RDS(on) -- VGS
300
Ta=25°C
250
200
1.0A
150 ID=0.5A
100
50
0
0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT02689
3.0
VDS=10V
2.5
ID -- VGS
2.0
1.5
1.0
0.5
0
0 0.4 0.8 1.2 1.6 2.0
Gate-to-Source Voltage, VGS -- V IT02688
RDS(on) -- Ta
250
200
150 ID=0.5A, VGS=2.5V
100 ID=1.0A, VGS=4.0V
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02690
No.7145-2/4


Part Number CPH6602
Description Ultrahigh-speed Switching
Maker Sanyo Semiconductor Corporation
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CPH6602 Datasheet PDF






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