* Adoption of FBET, MBIT processes.
* Large current capacity.
* Low collector-to-emitter saturation voltage.
* Fast switching time. ( ) : 2SB1229 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base V
D1835
Sanyo Semiconductor Corporation
178.98 KB
2sd1835.
Ordering number:EN2158A PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Applications Voltage regulators, relay.
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