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Sanyo Electric Components Datasheet

FTD2003 Datasheet

N-Channel Silicon MOS FET

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FTD2003 pdf
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FTD2003
N- Channel Silicon MOS FET
Very High Speed-Switchng
Features
• Low ON-state resistance.
• 2.5V drive.
• Mount height of 1.1mm.
• Complex Type enabling high density mount
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW10µS, dutycycle1%
Mounted on ceramic board
(1000mm2 ! 0.8mm) 1unit
Mounted on ceramic board
(1000mm2 ! 0.8mm)
20
±10
2.2
(8.8)
0.8
1.0
150
--55 to +150
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
V(BR)DSS ID=1mA , VGS=0
min
20
Zero Gate Voltage Drain Current
IDSS
VDS=20V , VGS=0
Gate to Source Leakage Current
IGSS
VGS=±8V , VDS=0
Cutoff Voltage
VGS(off)
VDS=10V , ID=1mA
0.4
Forward Transfer Admittance
| yfs |
VDS=10V , ID=2.2A
3.8
Static Drain to Source
RDS(on) 1 ID=2.2A , VGS=4V
On State Resistance
RDS(on) 2 ID=0.5A , VGS=2.5V
Input Capacitance
Ciss VDS=10V , f=1MHz
Output Capacitance
Coss VDS=10V , f=1MHz
Reverse Transfer Capacitance
Crss VDS=10V , f=1MHz
Turn-ON Delay Time
td(on)
Rise Time
tr See Specified Test
Turn-OFF Delay Time
td(off)
Circuit
Fall Time
tf
Total Gate Charge
Qg
Gate Source Charge
Qgs VDS=10V, VGS=10V, ID=2.2A
Gate Drain Charge
Qgd
Diode Forward Voltage
VSD
IS=2.2A , VGS=0
Marking : D2003
Switching Time Test Circuit
VIN
4V
0V
VIN
VDD=10V
ID=2.2A
RL=4.5
Electrical Connection
D2 S2 S2 G2
Case Outline
TSSOP8(unit:mm)
3.0
0.65
8 7 65
PW=10µS
D.C.1%
D VOUT
TENTATIVE
unit
V
V
A
A
W
W
°C
°C
typ max unit
V
10 µA
±10 µA
1.3 V
5.5 S
100 130 m
130 180 m
170 pF
90 pF
43 pF
10 ns
38 ns
30 ns
26 ns
9.5 nC
1 nC
1.5 nC
1.0 1.2 V
0.425
G
P.G 50
FTD2003
S
D1 S1 S1 G1
1
23
4
0.25
Specifications and information herein are subject to change without notice.
0.125
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
981221TM2fXHD


Part Number FTD2003
Description N-Channel Silicon MOS FET
Maker Sanyo Semiconductor Corporation
Total Page 1 Pages
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