TT2050 - NPN Transistor

Features

Package Dimensions unit : mm 2174 [TT2050] 16.0 5.0 High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 0.7 20.4 0.9 1 2 5.45 3 0.8 2.1 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Ratings 1500 800 5 12 25 3.0 Unit V V V A A W W °C °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Colle.

Sanyo Semiconductor Corporation

Datasheet Details

Part number	TT2050
Manufacturer	Sanyo Semiconductor Corporation
File Size	63.46 KB
Description	NPN Transistor
Datasheet	TT2050 Datasheet
Additional preview pages of the TT2050 datasheet.

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Full PDF Text Transcription

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Ordering number : ENN6674 TT2050 NPN Triple Diffused Planar Silicon Transistor www.DataSheet4U.com TT2050 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2174 [TT2050] 16.0 5.0 High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 0.7 20.4 0.9 1 2 5.45 3 0.8 2.1 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Ratings 1500 800 5 12 25 3.

Published: Feb 18, 2010 |