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2N5429 Datasheet Silicon NPN Power Transistors

Manufacturer: SavantIC

Download the 2N5429 datasheet PDF. This datasheet also includes the 2N5427 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2N5427_SavantIC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5429
Manufacturer SavantIC
File Size 142.78 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet 2N5429 Datasheet

General Description

·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications.

PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5427 2N5429 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5427 VCBO Collector-base voltage 2N5429 2N5427 VCEO Collector-emitter voltage 2N5429 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 100 6 7 1 40 200 -65~200 V A A W Open emitter 100 80 V CONDITIONS VALUE 80 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5427 IC=50mA ;IB=0 2N5429 VCEsat-1 VCEsat-2 VBE sat-1 VBE sat-2 ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2N5427 2N5429 IEBO hFE-1 hFE-2 hFE-3 fT Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency IC=2A;

IB=0.2A IC=7A ;IB=0.7A IC=2A;

Overview

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power.