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SavantIC

2N5611 Datasheet Preview

2N5611 Datasheet

(2N5605 - 2N5611) Silicon PNP Power Transistors

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SavantIC Semiconductor
Product Specification
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors 2N5605 2N5607 2N5609 2N5611
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5605
VCBO
Collector-base voltage
2N5607/5609 Open emitter
2N5611
2N5605
VCEO
Collector-emitter voltage 2N5607/5609 Open base
2N5611
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-80
-100
-120
-60
-80
-100
-5
-5
25
150
-65~150
UNIT
V
V
V
A
W
VALUE
4.37
UNIT
/W




SavantIC

2N5611 Datasheet Preview

2N5611 Datasheet

(2N5605 - 2N5611) Silicon PNP Power Transistors

No Preview Available !

SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5605
2N5607/5609 IC=50mA ;IB=0
2N5611
-60
-80
-100
V
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBE Base-emitter on voltage
IC=-2.5A ; VCE=-5V
ICBO Collector cut-off current
VCB=Rated VCBO; IE=0
ICEO Collector cut-off current
VCE= Rated VCEO,IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
2N5605/5609
2N5607/5611
IC=-2.5A ; VCE=-5V
70
30
-0.5 V
-1.5 V
-0.1 mA
-1.0 mA
-0.1 mA
200
90
2N5605/5609
fT Transition frequency
IC=-0.5A ; VCE=-10V
2N5607/5611
70
60
MHz
2


Part Number 2N5611
Description (2N5605 - 2N5611) Silicon PNP Power Transistors
Maker SavantIC
Total Page 3 Pages
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