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2N5629 Datasheet (2N5629 / 2N5630) Silicon NPN Power Transistors

Manufacturer: SavantIC

Datasheet Details

Part number 2N5629
Manufacturer SavantIC
File Size 139.76 KB
Description (2N5629 / 2N5630) Silicon NPN Power Transistors
Datasheet download datasheet 2N5629 Datasheet

General Description

·With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER Collector-base voltage 2N5629 2N5630 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 2N5629 2N5630 Open collector Open base CONDITIONS Open emitter VALUE 100 120 100 120 7 16 20 5.0 200 200 -65~200 V A A A W V UNIT V VCEO VEBO IC ICM IB PD Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N5629 2N5630 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5629 IC=0.2A ;IB=0 2N5630 IC=10A;

IB=1A IC=16A ;IB=4A IC=10A;

IB=1A IC=8A ;

Overview

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N5629.