2N5740
2N5740 is Silicon PNP Power Transistors manufactured by SavantIC.
- Part of the 2N5739 comparator family.
- Part of the 2N5739 comparator family.
DESCRIPTION
- With TO-66 package
- Low collector saturation voltage APPLICATIONS
- For general- purpose switching and power amplifier applications.
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO PARAMETER 2N5739 Collector-base voltage 2N5740 2N5739 VCEO VEBO IC ICM IB PC Tj Tstg Collector-emitter voltage 2N5740 Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=100 Open collector Open base -100 -5 -10 -20 -4 20 150 -65~200 V A A A W Open emitter -100 -60 V CONDITIONS VALUE -60 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.56 UNIT /W
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5739 IC=-0.2A ;IB=0 2N5740 IC=-5A; IB=-0.5A IC=-10A ;IB=-2.5A IC=-10A ;IB=-2.5A IC=-4A ; VCE=-4V VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150 VEB=-5V; IC=0 IC=-5A ; VCE=-5V IC=-10A ; VCE=-5V IC=-0.5A ; VCE=-10V CONDITIONS
2N5739 2N5740
SYMBOL
MIN -60
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
V -100 -1.0 -3.0 -2.5 -1.5 -0.1 -0.5 -5.0 -1.0 20 4 10 MHz 80 V V V V m A m A m A
VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEX IEBO h FE-1 h FE-2 f T
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N5739 2N5740
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)...