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2N5867 Datasheet (2N5867 / 2N5868) Silicon PNP Power Transistor

Manufacturer: SavantIC

Datasheet Details

Part number 2N5867
Manufacturer SavantIC
File Size 138.32 KB
Description (2N5867 / 2N5868) Silicon PNP Power Transistor
Datasheet download datasheet 2N5867 Datasheet

General Description

·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5867 VCBO Collector-base voltage 2N5868 2N5867 VCEO Collector-emitter voltage 2N5868 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -5 87.5 150 -65~200 V A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2N5867 2N5868 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5867 VCEO(SUS) Collector-emitter sustaining voltage 2N5868 VCEsat VBEsat ICBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2N5867 ICEO Collector cut-off current 2N5868 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VCE=-40V;

IB=0 VEB=-5V;

IC=0 IC=-1.5A ;

Overview

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2N5867.