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2N5871 Datasheet (2N5871 / 2N5872) Silicon PNP Power Transistor

Manufacturer: SavantIC

Datasheet Details

Part number 2N5871
Manufacturer SavantIC
File Size 138.07 KB
Description (2N5871 / 2N5872) Silicon PNP Power Transistor
Datasheet download datasheet 2N5871 Datasheet

General Description

·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5871 Collector-base voltage 2N5872 2N5871 VCEO VEBO IC PD Tj Tstg Collector-emitter voltage 2N5872 Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -7 115 150 -65~200 V A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2N5871 2N5872 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5871 IC=-0.1A ;IB=0 2N5872 IC=-5A;IB=-0.5A IC=-5A;

IB=-0.5A VCB=ratedVCBO;

IB=0 2N5871 ICEO Collector cut-off current 2N5872 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VCE=-40V;

Overview

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2N5871.