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SavantIC

2N6500 Datasheet Preview

2N6500 Datasheet

Silicon Power Transistor

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
With TO-66 package
·Wide area of operation
·High sustaining voltage
APPLICATIONS
·For high-speed switching and linear-
amplifier applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2N6500
·
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Collector current-peak
Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
120
90
7
4
5
3
35
150
-65~200
UNIT
V
V
V
A
A
A
W
MAX
5.0
UNIT
/W




SavantIC

2N6500 Datasheet Preview

2N6500 Datasheet

Silicon Power Transistor

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBEsat
Base -emitter saturation voltage
ICEV Collector cut-off current
ICEO Collector cut-off current
IC=3A; IB=0.3A
VCE=110V;VBE(off)=-1.5V
TC=150
VCE=70V; IB=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=3A ; VCE=2V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
Product Specification
2N6500
MIN TYP. MAX UNIT
90 V
1.5 V
2.5 V
5.0
10
mA
5.0 mA
25 mA
15 60
175 pF
2


Part Number 2N6500
Description Silicon Power Transistor
Maker SavantIC
PDF Download

2N6500 Datasheet PDF






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