2SA1006B Overview
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT 2SA1006 2SA1006A 2SA1006B CONDITIONS IC=-0.5A; IB=-50mA IC=-0.5A...
