2SA714
DESCRIPTION
- With TO-3 package
- Wide area of safe operation APPLICATIONS
- For power amplifier and power switching applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -6 -7 -11 60 150 -55~150 UNIT V V V A A W
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
SYMBOL
UNIT
V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO h FE f T
Collector-emitter breakdown voltage
IC=-25m A ;IB=0 IC=-1m A ;IE=0 IE=-1m A ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-150V; IE=0 VEB=-6V; IC=0...
