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SavantIC

2SA837 Datasheet Preview

2SA837 Datasheet

Silicon POwer Transistors

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·Complement to type 2SC1667
APPLICATIONS
·For radio frequency and power amplifier
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SA837
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=75
VALUE
-90
-90
-5
-4
50
150
-55~150
UNIT
V
V
V
A
W




SavantIC

2SA837 Datasheet Preview

2SA837 Datasheet

Silicon POwer Transistors

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
ICBO Collector cut-off current
VCB=-90V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-1A ; VCE=-4V
COB Collector output capacitance
IE=0; VCB=-10V;f=1MHz
fT Transition frequency
IC=-1A ; VCE=-10V
Product Specification
2SA837
MIN TYP. MAX UNIT
-90 V
-90 V
-5 V
-1.5 V
-0.1 mA
-0.1 mA
40 200
200 pF
10 MHz
2


Part Number 2SA837
Description Silicon POwer Transistors
Maker SavantIC
PDF Download

2SA837 Datasheet PDF






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