Datasheet4U Logo Datasheet4U.com

2SA969 - Silicon POwer Transistors

Description

With TO-66 package Complement to type 2SC2239 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING(See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum rat

📥 Download Datasheet

Datasheet preview – 2SA969

Datasheet Details

Part number 2SA969
Manufacturer SavantIC
File Size 143.22 KB
Description Silicon POwer Transistors
Datasheet download datasheet 2SA969 Datasheet
Additional preview pages of the 2SA969 datasheet.

📁 Similar Datasheet

  • 2SA969 - POWER TRANSISTOR (Inchange Semiconductor)
  • 2SA962A - SILICON PNP EPITAXIAL TYPE TRANSISTOR (Toshiba)
  • 2SA963 - POWER TRANSISTOR (Inchange Semiconductor)
  • 2SA965 - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SA965 - PNP Transistor (INCHANGE)
  • 2SA965 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 2SA965 - PNP Transistor (JCET)
  • 2SA965-Y - PNP Plastic-Encapsulate Transistors (MCC)
  • 2SA965TM - PNP Transistor (SeCoS)
  • 2SA966 - Silicon PNP Epitaxial Type Transistor (Toshiba Semiconductor)
Other Datasheets by SavantIC
  • 2SA963 - Silicon POwer Transistors
  • 2SA968 - Silicon POwer Transistors
  • 2SA968A - Silicon POwer Transistors
  • 2SA968B - Silicon POwer Transistors
  • 2SA900 - Silicon POwer Transistors
  • 2SA907 - (2SA907 - 2SA909) Silicon POwer Transistors
  • 2SA908 - (2SA907 - 2SA909) Silicon POwer Transistors
  • 2SA909 - (2SA907 - 2SA909) Silicon POwer Transistors

Full PDF Text Transcription

Click to expand full text
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA969 DESCRIPTION ·With TO-66 package ·Complement to type 2SC2239 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING(See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 PARAMETER Collector-base CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -1.5 1.5 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.
Published: |