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SavantIC

2SA969 Datasheet Preview

2SA969 Datasheet

Silicon POwer Transistors

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-66 package
·Complement to type 2SC2239
·High breakdown votage
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
PINNING(See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SA969
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
voltage
Collector-base Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
IE Emitter current
PT Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-160
-160
-5
-1.5
1.5
25
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SA969 Datasheet Preview

2SA969 Datasheet

Silicon POwer Transistors

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA969
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
-160
V
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA
-1.5 V
VBE Base-emitter on voltage
IC=-500mA ; VCE=-5V
-1.0 V
ICBO Collector cut-off current
VCB=-160V ;IE=0
-1.0 µA
IEBO Emitter cut-off current
VEB=-5V; IC=0
-1.0 µA
hFE DC current gain
IC=-100mA ; VCE=-5V
70 240
Cob Output capacitance
IE=0 ; VCB=-10V,f=1MHz
30 pF
fT Transition frequency
IC=-100mA ; VCE=10V
100 MHz
hFE Classifications
OY
70-140
120-240
2


Part Number 2SA969
Description Silicon POwer Transistors
Maker SavantIC
PDF Download

2SA969 Datasheet PDF






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