Datasheet Details
| Part number | 2SB1087 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 115.82 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | 2SB1087_SavantIC.pdf |
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Overview: SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors.
| Part number | 2SB1087 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 115.82 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | 2SB1087_SavantIC.pdf |
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·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and low speed power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -5 1.5 W UNIT V V V A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-30mA, IB=0 IC=-2A ,IB=-2mA IC=-2A ,IB=-2mA VCB=-100V, IE=0 VEB=-5V;
IC=0 IC=-2A , VCE=-5V IC=-5A , VCE=-5V 2000 500 MIN -100 2SB1087 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP.
MAX UNIT V -1.5 -2.0 1 -3 20000 V V µA mA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1087 Fig.2 Outline dimensions 3
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