2SB1096 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-30mA; IC=0 IC=-500mA ;IB=-50mA IC=-500mA ;IB=-50mA VCB=-150V; VCE=-10V...