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SavantIC
SavantIC

2SB1227 Datasheet Preview

2SB1227 Datasheet

SILICON POWER TRANSISTOR

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2SB1227 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220F package
·Complement to type 2SD1829
·High DC current gain.
·Large current capacity and wide ASO.
·Low saturation voltage.
·DARLINGTON
APPLICATIONS
·Suitable for use in control of motor drivers,
printer hammer drivers,relay drivers,and
constant-voltage regulators.
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Product Specification
2SB1227
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
-110
-100
-6
-5
-8
25
2
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SB1227 Datasheet Preview

2SB1227 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SB1227 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=-5mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=?
VCEsat Collector-emitter saturation voltage IC=-2.5A ; IB=-5mA
VBEsat Base-emitter saturation voltage
IC=-2.5A ; IB=-5mA
ICBO Collector cut-off current
VCB=-80V;IE=0
IEBO Emitter cut-off current
VEB=-5V;IC=0
hFE DC current gain
IC=-2.5A ; VCE=-3V
fT Transition frequency
IC=-2.5A ; VCE=-5V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=500IB1=-500IB2=-2A
VCC=-50V ,RL=25E
Product Specification
2SB1227
MIN TYP. MAX UNIT
-110 V
-100
V
-1.0 -1.5
V
-2.0 V
-0.1 mA
-3.0 mA
1500 4000
20 MHz
0.7 µs
1.3 µs
1.5 µs
2


Part Number 2SB1227
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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