2SB859 Description
Product Specification Silicon PNP Power Transistors 2SB859 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCB=-20V;f=1MHz...