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SavantIC

2SC4769 Datasheet Preview

2SC4769 Datasheet

SILICON POWER TRANSISTOR

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4769
DESCRIPTION
·With TO-3PML package
·High breakdown voltage, high reliability.
·High speed
·Built-in damper diode
APPLICATIONS
·Ultrahigh-definition color display
·Horizontal deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
6
7
16
60
3
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SC4769 Datasheet Preview

2SC4769 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4769
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A;IB=1.7 A
VBEsat
Base-emitter saturation voltage
IC=5A;IB=1.7 A
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0
IEBO Emitter cut-off current
VEB=4V; IC=0
ICBO
ICES
hFE-1
hFE-2
VF
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
Diode forward voltage
VCB=800V; IE=0
VCE=1500V; RBE=0
IC=1 A ; VCE=5V
IC=5A ; VCE=5V
IEC=7A
Switching times
tstg Storage time
tf Fall time
IC=4A;RL=33.3A
IB1=0.8A;- IB2=1.6A
VCC=200V
hFE-2 classifications
123
3-5 4-6 5-8
MIN TYP. MAX UNIT
5V
1.5 V
800 V
40 130 mA
10 µA
1 mA
8
38
2.0 V
3.0 µs
0.1 0.2 µs
2


Part Number 2SC4769
Description SILICON POWER TRANSISTOR
Maker SavantIC
PDF Download

2SC4769 Datasheet PDF






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