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SavantIC

2SC4833 Datasheet Preview

2SC4833 Datasheet

SILICON POWER TRANSISTOR

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4833
DESCRIPTION
·With ITO-220 package
·Switching power transistor
·High voltage,high speed
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-Peak
IB Base current
IBM Base current-Peak
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
500
400
7
5
10
2
4
35
150
-55~150
UNIT
V
V
V
A
A
A
A
W
MAX
3.57
UNIT
/W




SavantIC

2SC4833 Datasheet Preview

2SC4833 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4833
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VBEsat
Base-emitter saturation voltage
ICBO Collector cut-off current
ICEO Collector cut-off current
IEBO Emitter cut-off current
IC=2.5A; IB=0.5A
At rated volatge
At rated volatge
hFE-1
DC current gain
IC=2.5A ; VCE=2V
hFE-2
fT
ton
ts
tf
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
IC=1mA ; VCE=2V
IC=0.5A ; VCE=10V
IC=2.5A;IB1=0.5A
IB2=1A ,RL=60B
VBB2=4V
MIN TYP. MAX UNIT
400 V
1.0 V
1.5 V
0.1 mA
0.1 mA
10 25
10
13 MHz
0.3 µs
1.3 µs
0.1 µs
2


Part Number 2SC4833
Description SILICON POWER TRANSISTOR
Maker SavantIC
PDF Download

2SC4833 Datasheet PDF






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