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SavantIC

2SD1163 Datasheet Preview

2SD1163 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1163,2SD1163A
DESCRIPTION
www.dathasTheOet-42u2.c0ompackage
·Low collector saturation voltage
APPLICATIONS
·TV horizontal deflection output,
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
·Wit
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD1163
2SD1163A
Open emitter
VCEO
Collector-emitter voltage
2SD1163
2SD1163A
Open base
VEBO
Emitter-base voltage
Open collector
IC
ICM
IC(surge)
PC
Collector current
Collector current-peak
Collector current-surge
Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
300
350
120
150
6
7
10
20
40
150
-55~150
UNIT
V
V
V
A
A
A
W




SavantIC

2SD1163 Datasheet Preview

2SD1163 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1163,2SD1163A
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD1163
2SD1163A
IC=10mA ;RBE=:
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
VCEsat
Collector-emitter
saturation voltage
2SD1163
2SD1163A
IC=5A, IB=0.5A
VBEsat Base-emitter saturation voltage
IC=5A, IB=0.5A
ICBO
Collector
cut-offcurrent
2SD1163 VCB=300V;IE=0
2SD1163A VCB=350V;IE=0
hFE DC current gain
IC=5A ; VCE=5V
Switching times
tf Fall time
ICM=3.5A;IB1 =0.45A
MIN TYP MAX UNIT
120
V
150
6V
2.0
V
1.0
1.2 V
5 mA
5 mA
25
0.5 µs
2


Part Number 2SD1163
Description SILICON POWER TRANSISTOR
Maker SavantIC
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2SD1163 Datasheet PDF






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