2SD1291 Description
MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A;.
| Part number | 2SD1291 |
|---|---|
| Download | 2SD1291 Datasheet (PDF) |
| File Size | 163.66 KB |
| Manufacturer | SavantIC |
| Description | SILICON POWER TRANSISTOR |
|
|
|
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
2SD1291 | NPN Transistor |
MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A;.