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SavantIC
SavantIC

2SD1435 Datasheet Preview

2SD1435 Datasheet

SILICON POWER TRANSISTOR

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2SD1435 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1435
DESCRIPTION
www.dat·aWshieteht4TuO.co-m3PN package
·DARLINGTON
·High DC current gain
·Complement to type 2SB1031
APPLICATIONS
·For low frequency power amplifier and
high current switching applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
100
100
7
15
20
3
100
150
-55~150
UNIT
V
V
V
A
A
A
W



SavantIC
SavantIC

2SD1435 Datasheet Preview

2SD1435 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SD1435 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1435
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=1mA, RBE=>
V(BR)EBO Emitter-base breakdown voltage
IE=50mA, IC=0
VCEsat-1 Collector-emitter saturation voltage IC=8A ,IB=16mA
VCEsat-2 Collector-emitter saturation voltage IC=15A ,IB=150mA
VBEsat-1 Base-emitter saturation voltage
IC=8A ,IB=16mA
VBEsat-2 Base-emitter saturation voltage
IC=15A ,IB=150mA
ICBO Collector cut-off current
VCB=100V, IE=0
ICEO Collector cut-off current
VCE=80V, RBE=>
hFE DC current gain
IC=8A ; VCE=3V
Switching times
ton Turn-on time
toff Turn-off time
IC = 8 A,IB1 =-IB2 =16mA
MIN TYP. MAX UNIT
100 V
7V
2.0 V
3.0 V
2.5 V
3.5 V
100 µA
1.0 µA
1000
20000
2.0 µs
8.0 µs
2


Part Number 2SD1435
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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2SD1435 pdf
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