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SavantIC

2SD1652 Datasheet Preview

2SD1652 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1652
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPML package
·Built-in damper diode
·High breakdown voltage
·High speed switching
APPLICATIONS
·For color TV horizontal deflection output
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
6
6
16
60
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SD1652 Datasheet Preview

2SD1652 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1652
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; RBE=<
V(BR)CBO Collector-base breakdown voltage
IC=5mA; IE=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO Collector cut-off current
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE DC current gain
IC=1A ; VCE=5V
fT Transition frequency
VF Diode forward voltage
tf Fall time
IC=1A ; VCE=10V
IF=6A
IC=5A;IB1=1A;IB2=-2A
VCC=200V;RL=40B
MIN TYP. MAX UNIT
7V
800 V
1500
V
5.0 V
1.5 V
10 µA
40 130 mA
8
3 MHz
2.0 V
0.4 µs
2


Part Number 2SD1652
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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