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SavantIC
SavantIC

2SD1894 Datasheet Preview

2SD1894 Datasheet

SILICON POWER TRANSISTOR

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2SD1894 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1894
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High DC current gain
·Low collector saturation voltage
·Complement to type 2SB1254
APPLICATIONS
·Power amplification
·Optimum for 60W high-fidelity
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICP Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
160
140
5
7
12
70
3
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SD1894 Datasheet Preview

2SD1894 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SD1894 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1894
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=6mA
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=6mA
ICBO Collector cut-off current
VCB=160V; IE=0
ICEO Collector cut-off current
VCE=140V; IB=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE -2
DC current gain
IC=6A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Switching times
140
2000
5000
V
2.5 V
3.0 V
100 µA
100 µA
100 µA
30000
20 MHz
ton Turn-on time
ts Storage time
tf Fall time
IC=6A; VCC=50V
IB1=-IB2=6mA
2.5 µs
5.0 µs
2.5 µs
hFE-2 Classifications
QP
5000-15000 8000-30000
2


Part Number 2SD1894
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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