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SavantIC

2SD2101 Datasheet Preview

2SD2101 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2101
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·DARLINGTON
APPLICATIONS
·Low frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICP Collector current peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
200
200
7
10
15
30
2
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SD2101 Datasheet Preview

2SD2101 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2101
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=50mA; IC=0
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA; IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=25mA;RBE=;
VCEO(SUS) Collector-emitter sustaining voltage IC=5A; L=5mH
VCE(sat-1) Collector-emitter saturation voltage IC=5A ;IB=10mA
VCE(sat)-2 Collector-emitter saturation voltage IC=10A ;IB=100mA
VBE(sat-1) Base-emitter saturation voltage
IC=5A ;IB=10mA
VBE(sat-2) Base-emitter saturation voltage
ICBO Collector cut-off current
ICEO Collector cut-off current
hFE DC current gain
IC=10A ;IB=100mA
VCB=180V; IE=0
VCE=180V; RBE=;
IC=5A ; VCE=3V
MIN TYP. MAX UNIT
7V
200 V
200 V
170 V
1.5 V
3.0 V
2.0 V
3.5 V
10 µA
50 µA
1500
2


Part Number 2SD2101
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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