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SavantIC
SavantIC

2SD536 Datasheet Preview

2SD536 Datasheet

SILICON POWER TRANSISTOR

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2SD536 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD536
DESCRIPTION
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·With TO-3 package
·High voltage,high speed
·Low collector saturation voltage
APPLICATIONS
·Switching regulators
·DC-DC converters
·General purpose power amplifiers
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
200
200
5
10
5
100
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SD536 Datasheet Preview

2SD536 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SD536 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD536
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=0.1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
ICBO Collector cut-off current
VCB=200V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=5A ; VCE=5V
MIN TYP. MAX UNIT
200 V
200 V
5V
1.0 V
1.5 V
0.1 mA
0.1 mA
50
2


Part Number 2SD536
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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