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SavantIC

A1117 Datasheet Preview

A1117 Datasheet

PNP Transistor

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2SA1117
DESCRIPTION
·With TO-3 package
·High power dissipations
APPLICATIONS
·For power switching amplifier and
general purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-200
-200
-6
-17
-5
200
150
-65~150
UNIT
V
V
V
A
A
W




SavantIC

A1117 Datasheet Preview

A1117 Datasheet

PNP Transistor

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
ICBO Collector cut-off current
VCB=-200V; IE=0
IEBO Emitter cut-off current
VEB=-6V; IC=0
hFE DC current gain
IC=-8A ; VCE=-4V
fT Transition frequency
IC=-0.5A ; VCE=-12V
Product Specification
2SA1117
MIN TYP. MAX UNIT
-200
V
-6 V
-2.0 V
-0.1 mA
-0.1 mA
20
20 MHz
2


Part Number A1117
Description PNP Transistor
Maker SavantIC
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A1117 Datasheet PDF






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