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SavantIC

BD543 Datasheet Preview

BD543 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD543/A/B/C
DESCRIPTION
www.data·sWheietht4uT.cOom-220C package
·Complement to type BD544/A/B/C
·8 A continuous collector current
·10 A peak Collector current
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD543
VCBO
Collector-base voltage
BD543A
BD543B
BD543C
BD543
VCEO
Collector-emitter voltage
BD543A
BD543B
BD543C
VEBO
IC
ICM
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
40
60
80
100
40
60
80
100
5
8
10
70
-65~150
-65~150
UNIT
V
V
V
A
A
W




SavantIC

BD543 Datasheet Preview

BD543 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD543/A/B/C
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD543
V(BR)CEO
Collector-emitter
breakdown voltage
BD543A
BD543B
IC=30mA ;IB=0
BD543C
VCEsat-1
VCEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
IC=3A ;IB=0.3A
IC=5A ;IB=1A
VCEsat-3 Collector-emitter saturation voltage
IC=8A ;IB=1.6A
VBE
ICEO
IEBO
hFE-1
hFE-2
Base-emitter on voltage
Collector
cut-off current
BD543/543A
BD543B/543C
Emitter cut-off current
DC current gain
DC current gain
IC=5A ; VCE=4V
VCE=30V;IB=0
VCE=60V;IB=0
VEB=5V; IC=0
IC=1A ; VCE=4V
IC=3A ; VCE=4V
hFE-3
DC current gain
IC=5A ; VCE=4V
Switching times
ton Turn-on time
toff Turn-off time
IC=6A;
IB1=-IB2=0.6A
RL=5>
MIN TYP. MAX UNIT
40
60
V
80
100
0.5 V
0.5 V
1V
1.6 V
0.7 mA
1 mA
60
40
15
0.6 µs
1.0 µs
2


Part Number BD543
Description SILICON POWER TRANSISTOR
Maker SavantIC
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