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SavantIC
SavantIC

BD746A Datasheet Preview

BD746A Datasheet

SILICON POWER TRANSISTOR

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BD746A pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD746/A/B/C
DESCRIPTION
·With TO-3PN package
www.dat·aCshoemet4pule.cmoment to type BD745/A/B/C
·High current capability
·High power dissipation
APPLICATIONS
·For use in power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD746
VCBO
Collector-base voltage
BD746A
BD746B
Open emitter
BD746C
BD746
VCEO
Collector-emitter voltage
BD746A
BD746B
Open base
BD746C
VEBO
IC
ICM
IB
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
Ta=25
VALUE
-50
-70
-90
-110
-45
-60
-80
-100
-5
-20
-25
-7
115
3.5
150
-65~150
UNIT
V
V
V
A
A
A
W



SavantIC
SavantIC

BD746A Datasheet Preview

BD746A Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BD746A pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD746/A/B/C
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
BD746
V(BR)CEO
Collector-emitter
breakdown voltage
BD746A
BD746B
IC=-30mA; IB=0
BD746C
VCEsat-1 Collector-emitter saturation voltage
IC=-5 A;IB=-0.5 A
VCEsat-2 Collector-emitter saturation voltage
IC=-20 A;IB=-5 A
VBE -1
Base-emitter on voltage
IC=-5A ; VCE=-4V
VBE -2
Base-emitter on voltage
IC=-20A ; VCE=-4V
BD746/A VCE=-30V; IB=0
ICEO Collector cut-off current
BD746B/C VCE=-60V; IB=0
BD746
VCE=-50V; VBE=0
TC=125
ICBO
Collector cut-off current
BD746A
BD746B
VCE=-70V; VBE=0
TC=125
VCE=-90V; VBE=0
TC=125
BD746C
VCE=-110V; VBE=0
TC=125
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
hFE-2
DC current gain
IC=-5A ; VCE=-4V
hFE-3
DC current gain
IC=-20A ; VCE=-4V
Switching times resistive load
td Delay time
tr Rise time
ts Storage time
tf Fall time
IC=-5 A;IB1=-IB2=-0.5 A
VBE(off)=4.2V; RL=6A
tp=20µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
2
MIN
-45
-60
-80
-100
TYP.
MAX UNIT
V
-1.0 V
-3.0 V
-1.0 V
-3.0 V
-0.1 mA
-0.1
-5.0
-0.1
-5.0
-0.1
mA
-5.0
-0.1
-5.0
-0.5 mA
40
20 150
5
0.02 µs
0.12 µs
0.6 µs
0.3 µs
MAX
1.1
UNIT
/W


Part Number BD746A
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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BD746A Datasheet PDF
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