Datasheet Details
| Part number | BDW51C |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.92 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BDW51C_SavantIC.pdf |
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Overview: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDW51C www.datasheet4u.
| Part number | BDW51C |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.92 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BDW51C_SavantIC.pdf |
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·With TO-3 package ·Complement to type BDW52C ·Excellent safe operating area APPLICATIONS ·For use in power linear and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 15 20 7 125 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.4 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=5A;
IB=0.5A IC=10A;
IB=2.5A IC=10A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDW51C | Bipolar NPN Device | Seme LAB |
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BDW51C | NPN Transistor | INCHANGE |
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BDW51 | NPN Transistor | INCHANGE |
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BDW51A | Bipolar NPN Device | Seme LAB |
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BDW51A | NPN Transistor | INCHANGE |
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