BDX65 - SILICON POWER TRANSISTOR

Description

With TO-3 package DARLINGTON Complement to type BDX64 APPLICATIONS

Designed for power amplification and switching applications.

SavantIC

📥 Download Datasheet

Datasheet Details

Part number	BDX65
Manufacturer	SavantIC
File Size	138.75 KB
Description	SILICON POWER TRANSISTOR
Datasheet	BDX65 Datasheet
Additional preview pages of the BDX65 datasheet.

📁 Similar Datasheet

BDX65 - Bipolar NPN Device (Seme LAB)
BDX65 - NPN SILICON DARLINGTONS POWER TRANSISTOR (Comset Semiconductors)
BDX65 - NPN Transistor (INCHANGE)
BDX65A - NPN Transistor (INCHANGE)
BDX65A - NPN SILICON DARLINGTONS POWER TRANSISTOR (Comset Semiconductors)
BDX65B - Bipolar NPN Device (Seme LAB)
BDX65B - NPN SILICON DARLINGTONS POWER TRANSISTOR (Comset Semiconductors)
BDX65B - NPN Transistor (INCHANGE)
BDX65C - Bipolar NPN Device (Seme LAB)
BDX65C - NPN SILICON DARLINGTONS POWER TRANSISTOR (Comset Semiconductors)

Other Datasheets by SavantIC

BDX65B - SILICON POWER TRANSISTOR
BDX65C - SILICON POWER TRANSISTOR
BDX64C - SILICON POWER TRANSISTOR
BDX66 - SILICON POWER TRANSISTOR
BDX66B - SILICON POWER TRANSISTOR
BDX66C - SILICON POWER TRANSISTOR
BDX67 - SILICON POWER TRANSISTOR
BDX67B - SILICON POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX65 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·DARLINGTON ·Complement to type BDX64 APPLICATIONS ·Designed for power amplification and switching applications. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 12 16 0.

Published: May 10, 2009 |