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SavantIC

BU323A Datasheet Preview

BU323A Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU323A
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·DARLINGTON
APPLICATIONS
·Designed for automotive ignition,switching
regulator and motor control applications.
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
600
400
8
10
16
3
175
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
MAX
1.0
UNIT
/W




SavantIC

BU323A Datasheet Preview

BU323A Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.dataSsYhMeeBt4Ou.Lcom
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=10mH
Product Specification
BU323A
MIN TYP. MAX UNIT
400 V
VCEsat-1 Collector-emitter saturation voltage IC=3 A;IB=60mA
1.5 V
VCEsat-2 Collector-emitter saturation voltage IC=6A;IB=120m A
1.7 V
VCEsat-3 Collector-emitter saturation voltage IC=10A;IB=300m A
2.7 V
VBEsat-1 Base-emitter saturation voltage
IC=6A;IB=120m A
2.2 V
VBEsat-2 Base-emitter saturation voltage
IC=10A;IB=300m A
3V
ICER Collector cut-off current
VCE=Rated;VBE=100@
1 mA
IEBO Emitter cut-off current
VEB=6V; IC=0
40 mA
ICBO Collector cut-off current
VCB=Rated; IE=0
1 mA
hFE-1
DC current gain
IC=3A ; VCE=6V
300 550
hFE-2
DC current gain
IC=6A ; VCE=6V
150 350 2000
hFE-3
DC current gain
IC=10A ; VCE=6V
50 150
VBE Base-emitter on voltage
IC=10A ; VCE=6V
2.5 V
VF Diode forward voltage
IF=10A
2 3.5 V
Cob Output capacitance
VCB=10V,IE=0;fT=100kHz
165 350
pF
Switching times
ts Storage time
tf Fall time
IC=6A ;
IB1=-IB2=0.3A
VCC=12V ;
7.5 15 µs
5.2 15 µs
2


Part Number BU323A
Description SILICON POWER TRANSISTOR
Maker SavantIC
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BU323A Datasheet PDF





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